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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PN package Complement to type BDV64/64A/64B/64C DARLINGTON High DC current gain APPLICATIONS For use in general purpose amplifier applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDV65/65A/65B/65C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25ae ) SYMBOL PARAMETER BDV65 BDV65A BDV65B VCBO Collector-base voltage ANG INCH VCEO Collector-emitter voltage VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current BDV65C BDV65 BDV65A SEM E Open emitter DUC ICON CONDITIONS VALUE 60 TOR 80 60 80 UNIT V 100 120 Open base BDV65B BDV65C Open collector 100 120 5 12 15 0.5 TC=25ae 125 V V A A A W Collector power dissipation Ta=25ae Junction temperature Storage temperature 3.5 150 -65~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BDV65 BDV65A IC=30mA, IB=0 BDV65B BDV65C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BDV65 BDV65A BDV65B BDV65C IC=5A ,IB=20mA IC=5A ; VCE=4V VCB=60V, IE=0 VCB=30V, IE=0;TC=150ae VCB=80V, IE=0 VCB=40V, IE=0;TC=150ae VCB=100V, IE=0 VCB=50V, IE=0;TC=150ae VCB=120V, IE=0 VCB=60V, IE=0;TC=150ae VCE=30V, IB=0 CONDITIONS BDV65/65A/65B/65C SYMBOL MIN 60 80 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 100 120 2.0 2.5 0.4 2.0 0.4 2.0 0.4 2.0 V V ICBO Collector cut-off current mA ICEO IEBO hFE VEC BDV65 BDV65A BDV65B Collector cut-off current Emitter cut-off current DC current gain IN ANG CH BDV65C SEM E VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 IE=10A VCE=40V, IB=0 OND IC TOR UC 2 mA 5 mA 0.4 2.0 IC=5A ; VCE=4V 1000 3.5 V Diode forward voltage THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT ae /W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDV65/65A/65B/65C SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.1mm) 3 |
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